Publications

Semiconductor Electron Spectroscopy

• Characterization of electron states in high-k insulators and their interfaces using internal photo-emission spectroscopy
  V. V. Afanas’ev and A. Stesmans
  Intern. Workshop on Gate Stack Technology and Physics 2006, p. 67-72 (2006) (JSAP Nr. AP062204)

• H2/D2 isotopic effect on negative bias temperature instabilities in SiOx/HfSiON/TaN gate stacks
  M. Houssa, M. Aoulaiche, S. De Gendt, G. Groeseneken, M. M. Heyns, and A. Stesmans
  Electrochem. and Solid State Lett. 9, G10-12 (2006)

• Probing point defects and traps in stacks of ultrathin hafnium oxides on (100)Si by electron spin resonance: interfaces and N incorporation
  A. Stesmans and V. V. Afanas’ev
  In Defects in high-? Gate Dielectric Stacks, edited by E. Gusev (Springer, Dordrecht, 2006), p. 215-227 (ISBN: 1-4020-4366-X)

• Band alignment between (100) Si and amorphous LaAlO3, LaScO3, and Sc2O3: Atomically abrupt versus interlayer-containing interfaces
  V. V. Afanas’ev, A. Stesmans, L. F. Edge, D.G. Schlom, T. Heeg, and J. Schubert
  Appl. Phys. Lett. 88, 032104 (3 pp) (2006)

• Electron spin resonance probing of E’-type defects in fumed silica nanoparticles
  K. Clémer, A. Stesmans and V. V. Afanas’ev
  Mat. Sci. and Eng. C26, 766-770 (2006)

• Electron energy band alignment at interfaces of (100)Ge with rare-earth oxide insulators
  V. V. Afanas’ev, S. Shamuilia, A. Stesmans, A. Dimoulas, Y. Panayiotatos, and A. Sotiropoulos, M. Houssa and D. P. Brunco
  Appl. Phys. Lett. 88, 132111 (3pp) (2006)

• Ruthenium gate electrodes on SiO2 and HfO2: sensitivity to hydrogen and oxygen ambients
  L. Pantisano, T. Schram, Z. Li, J. G. Lisoni, G. Pourtois, S. De Gendt, and D. P. Brunco, A. Akheyar, V. V. Afanas’ev, S. Shamuilia, and A. Stesmans,
  Appl. Phys. Lett. 88, 243514 (3 pp) (2006)

• Sources of optical absorption between 5.7 and 5.9 eV in silica implanted with Si or O
  R. H. Magruder III, A. Stesmans, K. Clémer, R. A. Weeks, R. A. Weller,
  J. Appl. Phys. 100, 033517 (8 pp) (2006)

• Electron energy barriers at interfaces of GaAs(100) with LaAlO3 and Gd2O3
  V. V. Afanas’ev, and A. Stesmans, R. Droopad, M. Passlack, L. F. Edge, and D. G. Schlom
  Appl. Phys. Lett. 89, 092103 (3 pp) (2006)

• Origins of optical absorption between 4.8 and 4.9 eV in silica implanted with Si and with O ions
  R. H. Magruder III, A. Stesmans, K. Clémer, R. A. Weeks, R. A. Weller,
  J. Non-Cryst. Solids 352, 3027-34 (2006)

• Effective work function modulation by controlled dielectric monolayer deposition
  L. Pantisano, T. Schram, B. O’Sullivan, T. Conard, S. De Gendt, G. Groeseneken, P. Zimmerman, A. Akheyar, and M. Heyns, S. Shamuilia, V. V. Afanas’ev, and A. Stesmans,
  Appl. Phys. Lett. 89, 113505 (3 pp) (2006)

• Inherent density of point defects in thermal tensile strained (100)Si/SiO2 entities probed by electron spin resonance
  A. Stesmans, P. Somers, V. V. Afanas’ev, C. Claeys, and E. Simoen
  Appl. Phys. Lett. 89, 152103 (1-3) (2006)

• High open-circuit voltage values on fine-grained thin-film polysilicon solar cells
  L. Camel, I. Gordon, D. Van Gestel, G. Beaucarne, J. Poortmans, and A. Stesmans
  J. Appl. Phys. 100, 063702 (8 pp) (2006)

• Internal photoemission of electrons at interfaces of metals with low- insulators
  S. Shamuilia, V. V. Afanas’ev, P. Somers, A. Stesmans, Y.-L. Li, Zs. Tökei, G. G. Groeseneken, and K. Maex
  Appl. Phys. Lett. 89, 202909 (1-3) (2006)

• Paramagnetic intrinsic point defects in nm-sized silica particles: Interaction with SiO at elevated temperatures
  K. Clémer, A. Stesmans, and V. V. Afanas’ev
  Mat. Sci. and Eng. C (2006)

• Amorphous lanthanum lutetium oxide thin films as alternative high- gate dielectrics
  J. M. J. Lopes, M. Roeckrath, T. Heeg, E. Rije, J. Schubert, S. Mantl, V. V. Afanas’ev, S. Shamuilia, A. Stesmans, Y. Jia, and D. G. Schlom
  Appl. Phys. Lett. 89, 222902 (1-3) (2006)

• High performance Ge pMOS devices using a Si-compatible process flow
  P. Zimmerman, G. Nicholas, B. De Jaeger, B. Kaczer, A. Stesmans, L.-A. Ragnarsson, D. P. Brunco, F. E. Leys, M. Caymax, G. Winderickx, K. Opsomer, M. Meuris, and M. M. Heyns,
  IEDM (2006)

• Inherent point defects in thermal biaxially tensile strained-(100)Si/SiO2 probed by electron spin resonance
  A. Stesmans, P. Somers, V. V. Afanas’ev, C. Claeys, and E. Simoen
  Mat. Sci. Eng. B 135, 195-198 (2006)

• Nature and stability of the (100)Si/LaAlO3 interface probed by paramagnetic defects
  A. Stesmans, K. Clémer, and V. V. Afanas’ev
  Appl. Phys. Lett. 89, 112121 (3 pp) (2006)

• Spectroscopy of electron states at interfaces of (100)Ge with high- insulators
  V. V. Afanas’ev and A. Stesmans
  Mat Sci. Semicond. Process. 9, 764-771 (2006)

• Impact of defects on the high-k/MG stack: The electrical characterization challenge
  L. Pantisano, L.-A° . Ragnarsson, M. Houssa, R. Degraeve, G. Groeseneken, T. Schram, S. Degendt, M. Heyns, V. Afanas’ev, and A. Stesmans
  Mat. Sci. Semicond. Proc. 9, 880-884 (2006)

• Analysis of the (100)Si/LaAlO3 structure by electron spin resonance: nature of the interface
  K. Clémer, A. Stesmans, V. V. Afanase’v, L. F. Edge, and D. G. Schlom
  J. Mater. Sci: Mater. in Electron. 18, 735-741 (2007)

• Comment on “Nitridation effects on Pb1 center structures at the SiO2/Si(100) interfaces”
  A. Stesmans and V. V. Afanas’ev
  J. Appl. Phys. 101, 026106 (2p) (2007)

• Flatband voltage shift of ruthenium gated stacks and its link with the formation of a thin ruthenium oxide layer at the ruthenium/dielectric interface
  Li, Z, Schram, T., Pantisano, L., Conard, T., Van Elshocht, S., Deweerd, W., De Gendt, S.,De Meyer, K., Stesmans, A., Shamuilia, S., Afanas'ev, V. V., Akheyar, A.,Brunco, D. P., Yamada, N., and P. Lehnen.
  J. Appl. Phys. 101, 034503 (3) (2007)

• Electron spin resonance analysis of Si nanocrystals embedded in a SiO2 matrix
  M. Jivanescu, A. Stesmans, S. Godefroo, and M. Zacharias
  J. Optoelectron. Adv. Mat. 9, 721-724 (2007)

• Insights on the physical mechanism behind negative biastemperature instabilities
  M. Houssa, V. V. Afanas’ev, A. Stesmans, M. Aoulaiche, G. Groeseneken, and M. M. Heyns,
  Appl. Phys. Lett. 90, 043505 (2007)

• Observation of a P-associated defect in HfO2 nanolayers on (100)Si by electron spin resonance
  K. Clémer, A. Stesmans, and V. V. Afanas’ev
  Appl. Phys. Lett.90 No. 142116 (2007)

• Electron spin resonance observation of a P-associated defect in HfO2 films on (100)Si
  A. Stesmans, K. Clémer, and V. V. Afanas’ev
  Microelectron. Eng. 84, 2358-2361 (2007)

• Electronic structure of silicon interfaces with amorphous and epitaxial insulating oxides: Sc2O3, Lu2O3, LaLuO3
  V. V. Afanas’ev, S. Shamuilia, A. Badylevich, A. Stesmans, L. F. Edge, W. Tian, D. G. Schlom, J. M. J. Lopes, R. Roeckerath, and J. Schubert
  Microelectron. Eng. 84, 2278-2281 (2007)

• Forming gas anneal induced flat-band voltage shift of metal-oxide-semiconductor stacks and its link with hydrogen incorporation in metal gates
  Z. Li, T. Schram, L. Pantisano, T. Witters, A. Stesmans, A. Akheyar, V. V. Afanas’ev, N. Yamada, T. Takaaki, S. De Gendt, and K. De Meyer
  Microelectron. Eng. 84, 2213-2216 (2007)

• Investigation of the electronic structure at interfaces of crystalline and amorphous Gd2O3 thin layers with silicon substrates of different orientations
  M. Badylevich, S. Shamuilia, V. V. Afanas'ev, A. Stesmans, et al.
  Appl. Phys. Lett. 90, No. 252101 (2007)

• Paramagnetic point defects in (100)Si/LaAlO3 structures: Nature and stability of the interface
  K. Clémer, A. Stesmans, and V. V. Afanas’ev, L. F. Edge, and D. G. Schlom
  J. Appl. Phys. 102, 034516 (8) (2007)

• Paramagnetic intrinsic point defects in nm-sized silica particles: Interaction with SiO at elevated temperatures
  K. Clémer, A. Stesmans and V.V. Afanas'ev
  Mat. Sci. Eng.:C 27, 1475-1478 (2007)

• Internal photoemission at interfaces of high-kappa insulators with semiconductors and metals
  V. V. Afanas’ev and A. Stesmans
  J. Appl. Phys. 102, #081301 (p. 1-28)(2007)

• Mechanism of O2-anneal induced Vfb shifts of Ru gated stacks
  Z. Li, T. Schram, L. Pantisano, A. Stesmans, T. Conard, S. Shamuilia, V. V. Afanasiev, A. Akheyar, S. Van Elschocht, D. P. Brunco, W. Deweerd, Y. Naoki, P. Lehnen, S. De Gendt, and K. De Meyer,
  Microelectron. Reliab. 47, 518-20 (2007)

• Probing defects at interfaces and interlayers of low-dimensional Si/insulator (HfO2; LaAlO3) structures by electron spin resonance
  A. Stesmans and V. V. Afanas’ev
  Physica B 401-402, 550-5 (2007)