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III-N Ultra-Violet Detectors for Space Appliactions|
Compound semiconductors of the III-Nitride material system like GaN, AlGaN, etc. spanning bandgaps from 3.4 to 6.2eV, are promising candidates for solar blind UV detector devices. The applications for the sensors include flame sensing, ozone monitors, laser detectors, pollution monitoring and solar activity observation.
By varying the Aluminum content the spectral responsivity cutoff wavelength can be varied from 365 to 200nm. The European Space Agency plans to integrate a focal plane array of an Extreme UV detector made by AlGaN in their next solar mission. Possible pixel designs of the matrix array are GaN/AlGaN Schottky diodes and Metal-Semiconductor-Metal (MSM) diodes. During the thesis the proposed device structures should be investigated on the detector specific figures of merit like Quantum Efficiency, Spectral Responsivity, Specific Detectivity and Noise Equivalent Power. This includes the simulation of the devices, the processing of dedicated test vehicles and the characterization of the detector under UV illumination.
Duration of the project:
13.05.2008 - 13.05.2012