| Person in charge of the project: |
III-N power converter technology integration.|
AlGaN/GaN HEMTs devices are extremely promising for high power applications due to their high breakdown voltage (VBD) and high 2-DEG channel charge density (Ns). These devices are typically grown by MOCVD (metal organic chemical vapor deposition) on Si<111> or SiC substrates.|
This PhD aims to develop the technology integration for high power, high efficiency and low loss DC-DC power converters based on AlGaN/GaN HEMT (or DHFET) as a switching device. Foreseen challenges for the PhD work include: realizing high voltage HEMTs (or DHFETs) transistor through silicon substrate removal (complete and local), thermal management, co-integration of temperature monitor (based on 2-DEG resistor) and GaN based diode. Finally, the Power HEMTs (or DHFETs) will be integrated together with a GaN-based diode and a temperature sensor onto the same chip, to obtain a highly efficient integrated power converter based on GaN technology.
Duration of the project:
09.09.2008 - 09.09.2012
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